Part number:
2SD968A
Manufacturer:
Kexin
File Size:
69.85 KB
Description:
Silicon npn transistor.
* High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage 2SD968 2SD968A Collector to emitter voltage 2SD968 2SD968A Emitter to base voltage Peak collector current Collector current Collector power dissipation
2SD968A
Kexin
69.85 KB
Silicon npn transistor.
📁 Related Datasheet
2SD968 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SB789 and 2SB789A
Unit: mm
s F.
2SD968 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SB789 and 2SB789A
Unit: mm
s F.
2SD968 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO. Large collector power dissip.
2SD968A - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
2SD968A - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
2SD968A - Silicon NPN Transistor
(Panasonic Semiconductor)
..net
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency driver amplification Complementary .
2SD960 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
2SD961 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturat.
