NPN Silicon Planar Medium Power High Gain Transistor
FZT690B Product details
Features
Very low equivalent on-resistance; RCE(sat) 125mÙ at 2A. Gain of 400 at IC=1 Amp. Very low saturation voltage. SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7.00+0.3 -0.3
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range
123 2.9 4.6
0.70+0.1 -0.1
1 base 2 collector 3 emitter
Symbol VCBO VCEO VE.
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