NPN Silicon Planar Medium Power High Gain Transistor
FZT688B Product details
Features
Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7.00+0.3 -0.3
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range
123 2.9 4.6
0.70+0.1 -0.1
1 base 2 collector 3 emitter
Symbol VCBO.
📁 Similar Datasheet
FZT689B - NPN MEDIUM POWER HIGH GAIN TRANSISTOR(Diodes)