NPN Silcon Planar Medium Power High Gain Transistor
FZT692B Product details
Features
High gain + very low saturation voltage. SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7.00+0.3 -0.3
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range
123 2.9 4.6
0.70+0.1 -0.1
1 base 2 collector 3 emitter
Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg
Rating 70 70 5 2 5 2
-55 to +150
Unit V V V A.
📁 Similar Datasheet
FZT692BQ - 70V NPN MEDIUM POWER HIGH GAIN TRANSISTOR(DIODES)
FZT692B-Kexin.pdf
