Datasheet4U Logo Datasheet4U.com

KDS4953 - Dual 30V P-Channel PowerTrench MOSFET

KDS4953 Description

SMD Type Dual 30V P-Channel PowerTrench MOSFET KDS4953 IC IC .

KDS4953 Features

* -5 A, -30 V. RDS(ON) = 55m RDS(ON) = 95m Low gate charge(6nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching speed 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 @ VGS = -10V @ VGS =-4.5V Absolut

📥 Download Datasheet

Preview of KDS4953 PDF
datasheet Preview Page 2

Datasheet Details

Part number
KDS4953
Manufacturer
Kexin
File Size
80.19 KB
Datasheet
KDS4953_Kexin.pdf
Description
Dual 30V P-Channel PowerTrench MOSFET

📁 Related Datasheet

  • KDS4148U - SILICON EPITAXIAL PLANAR DIODE (KEC)
  • KDS - Intrusion Switches (ITT Industries)
  • KDS112 - SILICON EPITAXIAL TYPE DIODE (KEC)
  • KDS112E - SILICON EPITAXIAL TYPE DIODE (KEC)
  • KDS113 - SILICON EPITAXIAL TYPE DIODE (KEC)
  • KDS114 - SILICON EPITAXIAL PLANAR DIODE (KEC)
  • KDS114E - SILICON EPITAXIAL PLANAR DIODE (KEC)
  • KDS114V - SILICON EPITAXIAL PLANAR DIODE (KEC)

📌 All Tags

Dual 30V P-Channel PowerTrench MOSFET Kexin
Kexin KDS4953-like datasheet