Part number:
2SA1179
Manufacturer:
LGE
File Size:
280.81 KB
Description:
Pnp transistor.
* High breakdown voltage MARKING: M MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -55 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -150 Pc Collector Power Dissipation 200 TJ
2SA1179
LGE
280.81 KB
Pnp transistor.
📁 Related Datasheet
2SA1170 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SA1170
DESCRIPTION ·With MT-200 package ·High powe.
2SA1170 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2.
2SA1171 - Silicon PNP Epitaxial Transistor
(Hitachi Semiconductor)
2SA1171
Silicon PNP Epitaxial
Application
Low frequency small signal amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1171
Absolut.
2SA1173 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-140V(Min) ·Good Linearity .
2SA1175 - PNP SILICON TRANSISTOR
(NEC)
.
2SA1177 - PNP Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:ENN851H
PNP Epitaxial Planar Silicon Transistor
2SA1177
HF Amp Applications
Use
· Ideally suited for use in FM RF amplifiers, mixers.
2SA1179 - BIPOLAR TRANSISTORS
(Rectron)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* High breakdown voltage
2SA1179
MECHANICAL DATA
*.
2SA1179 - Silicon Epitaxial Planar Transistor
(GME)
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
High forward current transfer ratio hFE which has satisfactory linearity.
.