Leshan Radio Company manufacturer logo Part number: 1SS270 Manufacturer: Leshan Radio Company File Size: 82.13kb Download: 📄 Datasheet Description: Switching diodes.
1SS270 - Silicon Diode (Hitachi Semiconductor) 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-165A (Z) Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short .
1SS270 - Silicon Epitaxial Planar Diode (Renesas) 1SS270 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0566-0400 Rev.4.00 Sep 29, 2008 Features • Low capacitance. (C = 3.0 pF max) • Sh.
1SS270A - HIGH SPEED SWITCHING DIODE (EIC) 1SS270A FEATURES : • High switching speed: max. 3.5 ns • Continuous reverse voltage:max. 60 V • Peak reverse voltage:max. 70 V • Pb / RoHS Free MECHAN.
1SS270A - Silicon Diode (Hitachi Semiconductor) 1SS270A Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-166A (Z) Rev. 1 Aug.1995 Features • Low capacitance. (C = 3.0pF max) • Short .
1SS272 - Silicon Epitaxial Planar Type Diode (Toshiba Semiconductor) TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.92V (typ.) Fast reve.
1SS200 - Diode (Toshiba Semiconductor) TOSHIBA Diode Silicon Epitaxial Planar Type 1SS200 Ultra High Speed Switching Application 1SS200 Unit: mm z Low forward voltage : VF (3) = 0.92V (t.
1SS201 - Diode (Toshiba Semiconductor) TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse r.
1SS201 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR) XIN SEMICONDUCTOR ISO9002 1SS101 THUR 1SS301 SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY FEATURES For general purpo.
