MRF422 - RF Line NPN Silicon Power Transistor

MACOM

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Datasheet Details

Part number	MRF422
Manufacturer	MACOM
File Size	639.54 KB
Description	RF Line NPN Silicon Power Transistor
Datasheet	MRF422-MACOM.pdf

MRF422 Product details

Description

Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz. 11, STYLE 1 Electrical Characteristics: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0 Collector-Base Breakdown Voltage IC = 100 mA, IE = 0 Emitter-Base Breakdown Voltage IE = 10 mA, IC = 0 Collector Cutoff Current VCE = 28 V, VBE = 0, TC = 25°C ON Characteristics DC Current Gain

Features

Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40%.
Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min. ).
100% tested for load mismatch at all phase angles with 30:1 VSWR.

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Published: Jul 13, 2025 |