MRF422 RF Line NPN Silicon Power Transistor

MACOM

Description

RF Line NPN Silicon Power Transistor 150 W (PEP), 30 MHz, 28 V .
Designed primarily for applications as a high power linear amplifier from 2 to 30 MHz. 11, STYLE 1 Electrical Charac.

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Datasheet Specifications

Part number: MRF422
Manufacturer: MACOM
File Size: 639.54 KB
Datasheet: MRF422-MACOM.pdf
Description: RF Line NPN Silicon Power Transistor

Features

* Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP) Minimum Gain = 10 dB Efficiency = 40%
* Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (min. )

Applications

* as a high power linear amplifier from 2 to 30 MHz. MRF422 Rev. V2 CASE 211
* 11, STYLE 1 Electrical Characteristics: TA = +25°C Parameter Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage IC = 200 mA, IB = 0 IC = 100 mA, VBE = 0 Collector-Base Breakdown Voltage I

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MRF422 Line NPN Silicon Power Transistor MACOM

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