Description
This P-Channel Power MOSFET is pro duced using MOS-TECH Semiconductor’s advanced PowerTrench process that has b een especially tailored to minimize the on-state r esistance and yet maintain low gate charge for superior switching performance.
Features
- 4.3 A,.
- 25 V. RDS(ON) = 0.08 Ω @ VGS =.
- 4.5 V RDS(ON) = 0.11 Ω @ VGS =.
- 2.5 V.
- Low gate charge (3.6 nC typical).
- High performance trench technology for extremely
low RDS(ON).
- SuperSOTTM -23 provides low RDS(ON) and 30%
higher power handling capability than SOT23 in the same footprint
D
S
SOT-23
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
Parameter
Drain-Source Voltage Gate-Source Volt.
MT3421-MOS-TECH.pdf