MT8332N3 N-Channel Enhancement Mode Field Effect Transistor

MT Semiconductor

Description

MT8332N3 -Channel Enhanc ement Mode Field Effect Transistor 3URGXFW6XPPDU PRODUCT SUMMARY VDSS ID RDS(ON) 30V 25A 10 m¡@ VGS=10V.

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Datasheet Specifications

Part number: MT8332N3
Manufacturer: MT Semiconductor
File Size: 964.24 KB
Datasheet: MT8332N3-MTSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 6XSSHUKLJKGHQVHFHOOGHVLJQIRUORZ R'621 5XJJHGDQGUHOLDEOH Simple drive requirement DFN3
* 3 Package Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Pulsed Drain Current B Maximum Power Di

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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MT8332N3 N-Channel Enhancement Mode Field Effect Transistor MT Semiconductor

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