MT8361N3 Datasheet - MT Semiconductor

MT8361N3, Dual N- & P-Channel Power MOSFET

MT8361N3 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transis.

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Datasheet Details

Part number:

MT8361N3

Manufacturer:

MT Semiconductor

File Size:

1.29 MB

Description:

Dual N- & P-Channel Power MOSFET

Features

* N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V Absolute Maximum Ratings(TA = 25 unless otherwise noted) P Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage

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MT8361N3 Dual P-Channel Power MOSFET MT Semiconductor

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