Datasheet Specifications
- Part number
- MT8361N3
- Manufacturer
- MT Semiconductor
- File Size
- 1.29 MB
- Datasheet
- MT8361N3-MTSemiconductor.pdf
- Description
- Dual N- & P-Channel Power MOSFET
Description
MT8361N3 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transis.
Features
* N-Channel N 30V/8A R DS(on) = 0.024Ω @ VGS = 10V R DS(on) = 0.035Ω @ VGS = 4.5V P-Channel -30V/-5A R DS(on) = 0.050Ω @ VGS = -10V R DS(on) = 0.075Ω @ VGS = -4.5V Absolute Maximum Ratings(TA = 25 unless otherwise noted) P Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source VoltageMT8361N3 Distributors
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