Datasheet4U Logo Datasheet4U.com

MX29F1610A - 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

Datasheet Summary

Description

The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8.

The MX29F1610A includes 16-128KB(131,072) blocks or 1664KW(65,536) blocks.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

Features

  • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for de.

📥 Download Datasheet

Datasheet preview – MX29F1610A

Datasheet Details

Part number MX29F1610A
Manufacturer Macronix International
File Size 666.79 KB
Description 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
Datasheet download datasheet MX29F1610A Datasheet
Additional preview pages of the MX29F1610A datasheet.

📁 Similar Datasheet

  • MX29F001B - 1M bit CMOS Flash Memory (Macronix)
  • MX29F001BTC - 1M bit CMOS Flash Memory (Macronix)
  • MX29F001T - 1M bit CMOS Flash Memory (Macronix)
  • MX29F002 - 2M-BIT[256K x 8]CMOS FLASH MEMORY (Macronix)
  • MX29F002N - 2M-BIT[256K x 8]CMOS FLASH MEMORY (Macronix)
  • MX29F022 - 2M-BIT[256K x 8]CMOS FLASH MEMORY (Macronix)
  • MX29F4000 - 4m-Bit CMOS Equal Sector Flash Memory (Macronix)
  • MX29F800CB - 8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY (MACRONIX)
  • MX29F800CT - 8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY (MACRONIX)
  • MX29GL128F - SINGLE VOLTAGE 3V ONLY FLASH MEMORY (MACRONIX)
Other Datasheets by Macronix International
  • MX29F1611 - 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
  • MX29F1615 - 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
  • MX29F100B - 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
  • MX29F100T - 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY
  • MX29F040 - 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
  • MX29F040C - 4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
  • MX29F200B - 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
  • MX29F200CB - 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

Full PDF Text Transcription

Click to expand full text
PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 1.3 s typical Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle completion Low VCC write inhibit is equal to or less than 3.2V Software and hardware data protection • Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 0.
Published: |