Datasheet Details
- Part number
- 4N60C
- Manufacturer
- Maple Semiconductor
- File Size
- 299.91 KB
- Datasheet
- 4N60C-MapleSemiconductor.pdf
- Description
- 600V N-Channel MOSFET
4N60C Description
SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General .
This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.
4N60C Features
* - 4.0A, 600V, RDS(on)typ. = 2.2Ω@VGS = 10 V - Low gate charge ( typical 14nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLP4N60C
SLF4N60C
VD
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