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SLD60R2K3SJ - N-Channel MOSFET

SLD60R2K3SJ Description

SLD60R2K3SJ / SLU60R2K3SJ SLD60R2K3SJ / SLU60R2K3SJ 600V N-Channel MOSFET CB-FET General .
This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

SLD60R2K3SJ Features

* - 2.3A, 600V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD60R2K3SJ / SLU60R2K3

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N-Channel MOSFET Maple Semiconductor
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