SLP12N60C - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

- 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60C SLF12N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1).

📁 SLP12N60C Similar Datasheet

Other Datasheets by Maple Semiconductor

Published: Apr 11, 2017 |