SLP2N65UZ - N-Channel MOSFET

Maple Semiconductor

Datasheet Details

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- 2.0A, 650V, RDS(on) typ. = 4.3Ω@VGS = 10 V - Low gate charge ( typical 6.5nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted S Symbol Parameter SLP2N65UZ SLF2N65UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (No.

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Maple Semiconductor SLP2N65UZ-like datasheet

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