ME20N03 Datasheet (Matsuki) - N-Channel Enhancement MOSFET

ME20N03, N-Channel Enhancement MOSFET

The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME20N03 Features

* RDS(ON) ≦15mΩ@VGS=10V

* RDS(ON) ≦20mΩ @VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Desktop Computer

* Video Graphic Accelerate Card

* Battery Powere