Datasheet4U Logo Datasheet4U.com

ME20N03 - N-Channel Enhancement MOSFET

ME20N03 Description

ME20N03 N-Channel Enhancement MOSFET GENERAL .
The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME20N03 Features

* RDS(ON) ≦15mΩ@VGS=10V
* RDS(ON) ≦20mΩ @VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME20N03 Applications

* Power Management in Desktop Computer
* Video Graphic Accelerate Card
* Battery Powered System
* DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren

📥 Download Datasheet

Preview of ME20N03 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME20N03
Manufacturer
Matsuki
File Size
729.32 KB
Datasheet
ME20N03-Matsuki.pdf
Description
N-Channel Enhancement MOSFET

📁 Related Datasheet

  • ME20P03 - P-Channel MOSFET (VBsemi)
  • ME2-CH2O-16x15 - Electrochemical Formaldehyde Sensor (Winsen)
  • ME2-CH2O-D16 - Electrochemical Formaldehyde Sensor (Winsen)
  • ME2-CO-D14-C - Electrochemical Carbon Monoxide sensor (Winsen)
  • ME2-O2-D20 - Electrochemical Oxygen Sensor (Winsen)
  • ME2100 - DC / DC boost converter (Microne)
  • ME2100A33 - DC / DC boost converter (Microne)
  • ME2100A50 - DC / DC boost converter (Microne)

📌 All Tags

Matsuki ME20N03-like datasheet