ME20N03 Datasheet - Matsuki

ME20N03 N-Channel Enhancement MOSFET

The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME20N03 Features

* RDS(ON) ≦15mΩ@VGS=10V

* RDS(ON) ≦20mΩ @VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Desktop Computer

* Video Graphic Accelerate Card

* Battery Powere

ME20N03-Matsuki.pdf

ME20N03 Datasheet Preview — Preview of ME20N03 PDF

Datasheet Details

Part number:

ME20N03

Manufacturer:

Matsuki

File Size:

729.32 KB

Description:

N-channel enhancement mosfet.

ME20N03 Distributor

📁 Related Datasheet

ME20N10 N-Channel 100V (D-S) MOSFET (Matsuki)

ME20N10-G N-Channel 100V (D-S) MOSFET (Matsuki)

ME20N15 N-Channel MOSFET (Matsuki)

ME20N15-G N-Channel MOSFET (Matsuki)

ME200N04T N-Channel MOSFET (Matsuki)

ME200N04T-G N-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (VBsemi)

TAGS

ME20N03 ME20N03 N-Channel Enhancement MOSFET Matsuki