ME20N03 N-Channel Enhancement MOSFET

Matsuki

Description

ME20N03 N-Channel Enhancement MOSFET GENERAL .
The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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ME20N03 Datasheet Preview — Preview of ME20N03 PDF

Datasheet Specifications

Part number: ME20N03
Manufacturer: Matsuki
File Size: 729.32 KB
Datasheet: ME20N03-Matsuki.pdf
Description: N-Channel Enhancement MOSFET

Features

* RDS(ON) ≦15mΩ@VGS=10V
* RDS(ON) ≦20mΩ @VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Desktop Computer
* Video Graphic Accelerate Card
* Battery Powered System
* DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren

ME20N03 Distributors

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ME20N03 N-Channel Enhancement MOSFET Matsuki

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