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ME20N03 - N-Channel Enhancement MOSFET

ME20N03 Description

ME20N03 N-Channel Enhancement MOSFET GENERAL .
The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME20N03 Features

* RDS(ON) ≦15mΩ@VGS=10V
* RDS(ON) ≦20mΩ @VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME20N03 Applications

* Power Management in Desktop Computer
* Video Graphic Accelerate Card
* Battery Powered System
* DC/DC Converter PIN CONFIGURATION (TO-252) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curren

📥 Download Datasheet

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Datasheet Details

Part number
ME20N03
Manufacturer
Matsuki
File Size
729.32 KB
Datasheet
ME20N03-Matsuki.pdf
Description
N-Channel Enhancement MOSFET

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N-Channel Enhancement MOSFET Matsuki
Matsuki ME20N03-like datasheet