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ME20N03

N-Channel Enhancement MOSFET

ME20N03 Features

* RDS(ON) ≦15mΩ@VGS=10V

* RDS(ON) ≦20mΩ @VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Desktop Computer

* Video Graphic Accelerate Card

* Battery Powere

ME20N03 General Description

The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME20N03 Datasheet (729.32 KB)

Preview of ME20N03 PDF

Datasheet Details

Part number:

ME20N03

Manufacturer:

Matsuki

File Size:

729.32 KB

Description:

N-channel enhancement mosfet.

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TAGS

ME20N03 N-Channel Enhancement MOSFET Matsuki

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