ME20N15-G, ME20N15 Datasheet - Matsuki

ME20N15-G N-Channel MOSFET

The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME20N15-G Features

* RDS(ON)≦90mΩ@VGS=10V

* RDS(ON)≦110mΩ@VGS=7V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* Load Switch

* Th Ordering Information: ME20N15 (

ME20N15-Matsuki.pdf

ME20N15-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME20N15-G, ME20N15. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME20N15-G, ME20N15

Manufacturer:

Matsuki

File Size:

950.52 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME20N15-G, ME20N15.
Please refer to the document for exact specifications by model.

ME20N15-G Distributor

📁 Related Datasheet

ME20N15 N-Channel MOSFET (Matsuki)

ME20N10 N-Channel 100V (D-S) MOSFET (Matsuki)

ME20N10-G N-Channel 100V (D-S) MOSFET (Matsuki)

ME20N03 N-Channel Enhancement MOSFET (Matsuki)

ME200N04T N-Channel MOSFET (Matsuki)

ME200N04T-G N-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (Matsuki)

ME20P03 P-Channel MOSFET (VBsemi)

TAGS

ME20N15-G ME20N15 N-Channel MOSFET Matsuki