ME20N10 Datasheet (Matsuki) - N-Channel 100V (D-S) MOSFET

ME20N10, N-Channel 100V (D-S) MOSFET

The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME20N10 Features

* RDS(ON)≦78mΩ@VGS=10V

* RDS(ON)≦98mΩ@VGS=5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter (