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ME20N10 N-Channel 100V (D-S) MOSFET

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Description

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
ME20N10
Manufacturer
Matsuki
File Size
528.85 KB
Datasheet
ME20N10-Matsuki.pdf
Description
N-Channel 100V (D-S) MOSFET

Features

* RDS(ON)≦78mΩ@VGS=10V
* RDS(ON)≦98mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (TO-252-3L) Top View e Ordering Information: ME20N10 (Pb-free) ME20N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage

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