ME20N10-G, ME20N10 Datasheet - Matsuki

ME20N10-G N-Channel 100V (D-S) MOSFET

The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME20N10-G Features

* RDS(ON)≦78mΩ@VGS=10V

* RDS(ON)≦98mΩ@VGS=5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter (

ME20N10-Matsuki.pdf

ME20N10-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME20N10-G, ME20N10. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME20N10-G, ME20N10

Manufacturer:

Matsuki

File Size:

528.85 KB

Description:

N-channel 100v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME20N10-G, ME20N10.
Please refer to the document for exact specifications by model.

ME20N10-G Distributor

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ME20N10-G ME20N10 N-Channel 100V D-S MOSFET Matsuki