Datasheet Details
Part number:
ME20N10-G, ME20N10
Manufacturer:
Matsuki
File Size:
528.85 KB
Description:
N-channel 100v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME20N10-G, ME20N10.
Please refer to the document for exact specifications by model.
ME20N10-G, ME20N10, N-Channel 100V (D-S) MOSFET
The ME20N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME20N10-G Features
* RDS(ON)≦78mΩ@VGS=10V
* RDS(ON)≦98mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (
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