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ME200N04T - N-Channel MOSFET

ME200N04T Description

N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL .
The ME200N04T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME200N04T Features

* RDS(ON)≦3.5mΩ@VGS=10V
* RDS(ON)≦4.7mΩ@VGS=5V
* Super high density cell design for extremely low RDS(ON)

ME200N04T Applications

* Power Management
* DC/DC Converter
* Load Switch e Ordering Information: ME200N04T (Pb-free) ME200N04T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltag

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Datasheet Details

Part number
ME200N04T
Manufacturer
Matsuki
File Size
697.86 KB
Datasheet
ME200N04T-Matsuki.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Matsuki
Matsuki ME200N04T-like datasheet