ME20N15 Datasheet, Mosfet, Matsuki

ME20N15 Features

• Mosfet
• RDS(ON)≦90mΩ@VGS=10V
• RDS(ON)≦110mΩ@VGS=7V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC curre

PDF File Details

Part number:

ME20N15

Manufacturer:

Matsuki

File Size:

950.52kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench

ME20N15 Application

• Applications
• Power Management
• DC/DC Converter
• Load Switch
• Th Ordering Information: ME20N15 (Pb-free) ME20N1

TAGS

ME20N15

Matsuki

📁 Related Datasheet

ME20N10 - N-Channel 100V (D-S) MOSFET (Matsuki)
ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistor.

ME20N10-G - N-Channel 100V (D-S) MOSFET (Matsuki)
ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION The ME20N10 is the N-Channel logic enhancement mode power field effect transistor.

ME20N15-G - N-Channel MOSFET (Matsuki)
N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION The ME20N15 is the N-Channel logic enhancement mode power field effect transistors are produced using.

ME20N03 - N-Channel Enhancement MOSFET (Matsuki)
ME20N03 N-Channel Enhancement MOSFET GENERAL DESCRIPTION The ME20N03 is the N-Channel logic enhancement mode power field effect transistors are produc.

ME200N04T - N-Channel MOSFET (Matsuki)
N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect tra.

ME200N04T-G - N-Channel MOSFET (Matsuki)
N- Channel 40V (D-S) MOSFET ME200N04T / ME200N04T-G GENERAL DESCRIPTION The ME200N04T is the N-Channel logic enhancement mode power field effect tra.

ME20P03 - P-Channel MOSFET (Matsuki)
P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME20P03 is the P-Channel logic enhancement mode power field effect transistors are produced using.

ME20P03 - P-Channel MOSFET (VBsemi)
ME20P03-VB ME20P03-VB Datasheet P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5.

ME20P03-G - P-Channel MOSFET (Matsuki)
P- Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME20P03 is the P-Channel logic enhancement mode power field effect transistors are produced using.

ME20P03F - P-Channel MOSFET (Matsuki)
P-Channel 30V (D-S) MOSFET ME20P03F/ME20P03F-G GENERAL DESCRIPTION The ME20P03F is the P-Channel logic enhancement mode power field effect transisto.