ME2307 Datasheet (Matsuki) - P-Channel 30V (D-S) MOSFET

ME2307, P-Channel 30V (D-S) MOSFET

The ME2307 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2307 Features

* RDS(ON) ≦70mΩ@VGS=-10V

* RDS(ON) ≦95mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS(ON) APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC Ordering Information:ME2307 (Pb-free) ME2307-G