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ME2301 - P-Channel Enhancement Mode Mosfet

Datasheet Summary

Description

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) ≦110mΩ@VGS=-4.5V.
  • RDS(ON) ≦150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS(ON).

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Datasheet preview – ME2301

Datasheet Details

Part number ME2301
Manufacturer Matsuki
File Size 1.04 MB
Description P-Channel Enhancement Mode Mosfet
Datasheet download datasheet ME2301 Datasheet
Additional preview pages of the ME2301 datasheet.

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Full PDF Text Transcription

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P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. ME2301/ME2301-G FEATURES ● RDS(ON) ≦110mΩ@VGS=-4.5V ● RDS(ON) ≦150mΩ@VGS=-2.
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