ME2301 Datasheet (Matsuki) - P-Channel Enhancement Mode Mosfet

ME2301, P-Channel Enhancement Mode Mosfet

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2301 Features

* RDS(ON) ≦110mΩ@VGS=-4.5V

* RDS(ON) ≦150mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON) APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (SOT-23) Top View e Ord