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ME2301DC-G, ME2301DC Datasheet - Matsuki

ME2301DC-G P-Channel 20V (D-S) MOSFET

The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME2301DC-G Features

* RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch DSC PIN CONFIGURATION (SOT-23) Top View Ordering Information: ME2301DC (Pb-free) ME2301DC-G (Gr

ME2301DC-Matsuki.pdf

This datasheet PDF includes multiple part numbers: ME2301DC-G, ME2301DC. Please refer to the document for exact specifications by model.
ME2301DC-G Datasheet Preview Page 2 ME2301DC-G Datasheet Preview Page 3

Datasheet Details

Part number:

ME2301DC-G, ME2301DC

Manufacturer:

Matsuki

File Size:

732.65 KB

Description:

P-channel 20v (d-s) mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2301DC-G, ME2301DC.
Please refer to the document for exact specifications by model.

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ME2301DC-G ME2301DC P-Channel 20V D-S MOSFET Matsuki

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