ME2301A Datasheet - Matsuki

ME2301A P-Channel 20V (D-S) MOSFET

The ME2301A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2301A Features

* RDS(ON) ≦75mΩ@VGS=-4.5V

* RDS(ON) ≦95mΩ@VGS=-2.5V

* RDS(ON) ≦130mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

ME2301A-Matsuki.pdf

ME2301A Datasheet Preview — Preview of ME2301A PDF

Datasheet Details

Part number:

ME2301A

Manufacturer:

Matsuki

File Size:

928.32 KB

Description:

P-channel 20v (d-s) mosfet.

📁 Related Datasheet

ME2301 P-Channel Enhancement Mode Mosfet (Matsuki)

ME2301-G P-Channel Enhancement Mode Mosfet (Matsuki)

ME2301A-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301D P-Channel MOSFET (VBsemi)

ME2301DC P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301DC-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301GC P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301GC-G P-Channel 20V (D-S) MOSFET (Matsuki)

TAGS

ME2301A ME2301A P-Channel 20V D-S MOSFET Matsuki

ME2301A Distributor