ME2301-G, ME2301 Datasheet - Matsuki

ME2301-G P-Channel Enhancement Mode Mosfet

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2301-G Features

* RDS(ON) ≦110mΩ@VGS=-4.5V

* RDS(ON) ≦150mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON) APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (SOT-23) Top View e Ord

ME2301-Matsuki.pdf

ME2301-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2301-G, ME2301. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2301-G, ME2301

Manufacturer:

Matsuki

File Size:

1.04 MB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2301-G, ME2301.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ME2301 P-Channel Enhancement Mode Mosfet (Matsuki)

ME2301A P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301A-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301D P-Channel MOSFET (VBsemi)

ME2301DC P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301DC-G P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301GC P-Channel 20V (D-S) MOSFET (Matsuki)

ME2301GC-G P-Channel 20V (D-S) MOSFET (Matsuki)

TAGS

ME2301-G ME2301 P-Channel Enhancement Mode Mosfet Matsuki

ME2301-G Distributor