Datasheet Details
Part number:
ME2301-G, ME2301
Manufacturer:
Matsuki
File Size:
1.04 MB
Description:
P-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2301-G, ME2301.
Please refer to the document for exact specifications by model.
ME2301-G, ME2301, P-Channel Enhancement Mode Mosfet
The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME2301-G Features
* RDS(ON) ≦110mΩ@VGS=-4.5V
* RDS(ON) ≦150mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON) APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC PIN CONFIGURATION (SOT-23) Top View e Ord
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