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ME2301-G

P-Channel Enhancement Mode Mosfet

ME2301-G Features

* RDS(ON) ≦110mΩ@VGS=-4.5V

* RDS(ON) ≦150mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON) APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Battery Powered System

* Load Switch

* DSC PIN CONFIGURATION (SOT-23) Top View e Ord

ME2301-G General Description

The ME2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2301-G Datasheet (1.04 MB)

Preview of ME2301-G PDF

Datasheet Details

Part number:

ME2301-G

Manufacturer:

Matsuki

File Size:

1.04 MB

Description:

P-channel enhancement mode mosfet.

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TAGS

ME2301-G P-Channel Enhancement Mode Mosfet Matsuki

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