ME35N10 Datasheet (Matsuki) - N-Channel 100V (D-S) MOSFET

ME35N10, N-Channel 100V (D-S) MOSFET

The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application.

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ME35N10 Features

* RDS(ON)≦22mΩ@VGS=10V

* RDS(ON)≦26mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* DC/DC Converter

* Load Switch

* LCD/ LED Display inverter (TO-252-3L) Top View

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