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ME35N10-G, ME35N10 N-Channel 100V (D-S) MOSFET

ME35N10-G Description

ME35N10/ME35N10-G N- Channel 100V (D-S) MOSFET GENERAL .
The ME35N10 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME35N10-G Features

* RDS(ON)≦22mΩ@VGS=10V
* RDS(ON)≦26mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME35N10-G Applications

* DC/DC Converter
* Load Switch
* LCD/ LED Display inverter (TO-252-3L) Top View
* The Ordering Information: ME35N10 (Pb-free) ME35N10-G (Green product-Halogen free ) Absolute Maximum Ratings (Tc=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Co

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME35N10-G, ME35N10. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME35N10-G, ME35N10
Manufacturer
Matsuki
File Size
1.11 MB
Datasheet
ME35N10-Matsuki.pdf
Description
N-Channel 100V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME35N10-G, ME35N10.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel 100V D-S MOSFET Matsuki
Matsuki ME35N10-G-like datasheet