ME3981 Datasheet (Matsuki) - Dual P-Channel 20V (D-S) MOSFET

ME3981, Dual P-Channel 20V (D-S) MOSFET

The ME3981 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME3981 Features

* RDS(ON)≦62mΩ@VGS=-4.5V

* RDS(ON)≦80mΩ@VGS=-2.5V

* RDS(ON)≦115mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Bat