Datasheet Details
Part number:
ME3985DS-G, ME3985DS
Manufacturer:
Matsuki
File Size:
670.59 KB
Description:
Dual p-channel 20v (d-s) mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME3985DS-G, ME3985DS.
Please refer to the document for exact specifications by model.
ME3985DS-G, ME3985DS, Dual P-Channel 20V (D-S) MOSFET
The ME3985DS is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application
ME3985DS-G Features
* RDS(ON)≦120mΩ@VGS=-4.5V
* RDS(ON)≦160mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC
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