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ME3981-G

Dual P-Channel 20V (D-S) MOSFET

ME3981-G Features

* RDS(ON)≦62mΩ@VGS=-4.5V

* RDS(ON)≦80mΩ@VGS=-2.5V

* RDS(ON)≦115mΩ@VGS=-1.8V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Bat

ME3981-G General Description

The ME3981 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME3981-G Datasheet (0.97 MB)

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Preview of ME3981-G PDF

Datasheet Details

Part number:

ME3981-G

Manufacturer:

Matsuki

File Size:

0.97 MB

Description:

Dual p-channel 20v (d-s) mosfet.

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ME3981-G Dual P-Channel 20V D-S MOSFET Matsuki

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