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ME4548-G

Dual N- & P-Channel MOSFET

ME4548-G Features

* RDS(ON) ≦18 mΩ@VGS=10V (N-Ch)

* RDS(ON) ≦29 mΩ@VGS=4.5V(N-Ch)

* RDS(ON) ≦20mΩ@VGS=-10V(P-Ch)

* RDS(ON) ≦29 mΩ@VGS=-4.5V(P-Ch)

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Ma

ME4548-G General Description

The ME4548 is the dual N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicat.

ME4548-G Datasheet (1.42 MB)

Preview of ME4548-G PDF

Datasheet Details

Part number:

ME4548-G

Manufacturer:

Matsuki

File Size:

1.42 MB

Description:

Dual n- & p-channel mosfet.

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TAGS

ME4548-G Dual P-Channel MOSFET Matsuki

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