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ME6874-G - Dual N-Channel 20V (D-S) MOSFET

This page provides the datasheet information for the ME6874-G, a member of the ME6874 Dual N-Channel 20V (D-S) MOSFET family.

Datasheet Summary

Description

The ME6874 is the Dual N-Channel logic enhancement mode power

Features

  • 20V/6.0A,RDS(ON)=25mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS.
  • 20V/5.2A,RDS(ON)=32mΩ@VGS=2.5V trench technology. This high density process is especially tailored to.
  • Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited.
  • Exceptional on-resistance and maximum DC current for low voltage.

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Datasheet preview – ME6874-G

Datasheet Details

Part number ME6874-G
Manufacturer Matsuki
File Size 688.40 KB
Description Dual N-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME6874-G Datasheet
Additional preview pages of the ME6874-G datasheet.

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Full PDF Text Transcription

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ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET ＞ GENERAL DESCRIPTION The ME6874 is the Dual N-Channel logic enhancement mode power FEATURES ● 20V/6.0A,RDS(ON)=25mΩ@VGS=4.5V field effect transistors are produced using high cell density, DMOS ● 20V/5.2A,RDS(ON)=32mΩ@VGS=2.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
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