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ME70N10T-G, ME70N10T N- Channel 100-V (D-S) MOSFET

ME70N10T-G Description

N- Channel 100-V (D-S) MOSFET ME70N10T / ME70N10T-G GENERAL .
The ME70N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

ME70N10T-G Features

* RDS(ON)≦17mΩ@VGS=10V
* Super high density cell design for extremely low RDS(ON)

ME70N10T-G Applications

* Power Management
* DC/DC Converter
* Load Switch
* The Ordering Information: ME70N10T (Pb-free) ME70N10T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ME70N10T-G, ME70N10T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ME70N10T-G, ME70N10T
Manufacturer
Matsuki
File Size
948.51 KB
Datasheet
ME70N10T-Matsuki.pdf
Description
N- Channel 100-V (D-S) MOSFET
Note
This datasheet PDF includes multiple part numbers: ME70N10T-G, ME70N10T.
Please refer to the document for exact specifications by model.

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Channel 100-V D-S MOSFET Matsuki
Matsuki ME70N10T-G-like datasheet