Datasheet4U Logo Datasheet4U.com

ME7686 N-Channel MOSFET

ME7686 Description

N-Channel 30V(D-S) Enhancement MOSFET GENERAL .
The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

ME7686 Features

* RDS(ON)≦10.5mΩ@VGS=10V
* RDS(ON)≦18mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)

ME7686 Applications

* Power Management in Note book
* NB/MB High side switching
* Battery Powered System
* DC/DC Converter
* Load Switch
* The Ordering Information: ME7686/ME7686-G (Green product-Halo

📥 Download Datasheet

Preview of ME7686 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
ME7686
Manufacturer
Matsuki
File Size
1.13 MB
Datasheet
ME7686-Matsuki.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • ME7660 - CHARGE PUMP DC-DC VOLTAGE CONVERTER (UTC)
  • ME7660C - Charge Pump DC-DC Voltage Converter (Micro One)
  • ME700802 - Three-Phase Diode Bridge Modules (20 Amperes/800 Volts) (Powerex Powers)
  • ME700803 - Three-Phase Diode Bridge Modules (30 Amperes/800 Volts) (Powerex Powers)
  • ME701202 - Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701203 - Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701602 - Three-Phase Diode Bridge Modules (20 Amperes/1200-1600 Volts) (Powerex Powers)
  • ME701603 - Three-Phase Diode Bridge Modules (30 Amperes/1200-1600 Volts) (Powerex Powers)

📌 All Tags

N-Channel MOSFET Matsuki
Matsuki ME7686-like datasheet