ME7686-G Datasheet - Matsuki

ME7686-G N-Channel MOSFET

The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such .

ME7686-G Features

* RDS(ON)≦10.5mΩ@VGS=10V

* RDS(ON)≦18mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* NB/MB High side switching

* Battery Powered System

ME7686-G Datasheet (1.13 MB)

ME7686-G Datasheet Preview — Preview of ME7686-G PDF

Datasheet Details

Part number:

ME7686-G

Manufacturer:

Matsuki

File Size:

1.13 MB

Description:

N-channel mosfet.

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ME7686-G N-Channel MOSFET Matsuki

ME7686-G Distributor