Datasheet Details
Part number:
ME7686-G, ME7686
Manufacturer:
Matsuki
File Size:
1.13 MB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME7686-G, ME7686.
Please refer to the document for exact specifications by model.
ME7686-G, ME7686, N-Channel MOSFET
The ME7686-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such
ME7686-G Features
* RDS(ON)≦10.5mΩ@VGS=10V
* RDS(ON)≦18mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* NB/MB High side switching
* Battery Powered System
📁 Related Datasheet
📌 All Tags
