Description
ME7688/ME7688-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL .
The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
Features
* RDS(ON)≦11mΩ@VGS=10V
* RDS(ON)≦19.5mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
Applications
* Power Management in Note book
* NB/MB Vcore Low side switching
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
e Ordering Information: ME7688 (Pb-free)
ME768