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ME7688-G Datasheet - Matsuki

N-Channel MOSFET

ME7688-G Features

* RDS(ON)≦11mΩ@VGS=10V

* RDS(ON)≦19.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* NB/MB Vcore Low side switching

* Portable Equipment

ME7688-G General Description

The ME7688 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME7688-G Datasheet (0.98 MB)

Preview of ME7688-G PDF

Datasheet Details

Part number:

ME7688-G

Manufacturer:

Matsuki

File Size:

0.98 MB

Description:

N-channel mosfet.

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ME7688-G N-Channel MOSFET Matsuki

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