Datasheet4U.com

MEBSS138D - N-Channel MOSFET

Matsuki

📥 Download Datasheet

MEBSS138D Datasheet Preview — Preview of MEBSS138D PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MEBSS138D
Manufacturer	Matsuki
File Size	1.08 MB
Description	N-Channel MOSFET
Datasheet	MEBSS138D-Matsuki.pdf

MEBSS138D Product details

Description

The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON)≦3.5Ω@VGS=10V.
RDS(ON)≦4Ω@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📁 MEBSS138D Similar Datasheet

MEB - Micro Edgeboard (ITT Industries)
MEB00806 - Three-Phase Diode (Powerex Powers)

Other Datasheets by Matsuki

MEBSS138D-G - N-Channel MOSFET
MEBSS138DK - N-Channel MOSFET
MEBSS138DK-G - N-Channel MOSFET
MEBSS138 - N-Channel MOSFET
MEBSS138-G - N-Channel MOSFET
MEBSS123 - N-Channel MOSFET

Published: Mar 20, 2018 |