Datasheet Details
Part number:
MEBSS138-G, MEBSS138
Manufacturer:
Matsuki
File Size:
685.46 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: MEBSS138-G, MEBSS138.
Please refer to the document for exact specifications by model.
MEBSS138-G, MEBSS138, N-Channel MOSFET
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such a
MEBSS138-G Features
* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦3.5Ω@VGS=5V
* RDS(ON)≦7Ω@VGS=2.75V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* DC/DC Converter
* Load Switch
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