MEBSS138-G, MEBSS138 Datasheet - Matsuki

MEBSS138-G N-Channel MOSFET

The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

MEBSS138-G Features

* RDS(ON)≦3Ω@VGS=10V

* RDS(ON)≦3.5Ω@VGS=5V

* RDS(ON)≦7Ω@VGS=2.75V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

MEBSS138-Matsuki.pdf

MEBSS138-G Datasheet Preview — This datasheet PDF includes multiple part numbers: MEBSS138-G, MEBSS138. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MEBSS138-G, MEBSS138

Manufacturer:

Matsuki

File Size:

685.46 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: MEBSS138-G, MEBSS138.
Please refer to the document for exact specifications by model.

MEBSS138-G Distributor

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MEBSS138-G MEBSS138 N-Channel MOSFET Matsuki