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MEBSS138 N-Channel MOSFET

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Description

MEBSS138/MEBSS138-G N - Channel 50V (D-S) MOSFET GENERAL .
The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number
MEBSS138
Manufacturer
Matsuki
File Size
685.46 KB
Datasheet
MEBSS138-Matsuki.pdf
Description
N-Channel MOSFET

Features

* RDS(ON)≦3Ω@VGS=10V
* RDS(ON)≦3.5Ω@VGS=5V
* RDS(ON)≦7Ω@VGS=2.75V
* Super high density cell design for extremely low RDS(ON)

Applications

* Power Management in Note book
* DC/DC Converter
* Load Switch
* LCD Display inverter (SOT-23) Top View
* Th Ordering Information: MEBSS138 (Pb-free)
* MEBSS138-G (Gr

MEBSS138 Distributors

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