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MEBSS138

N-Channel MOSFET

MEBSS138 Features

* RDS(ON)≦3Ω@VGS=10V

* RDS(ON)≦3.5Ω@VGS=5V

* RDS(ON)≦7Ω@VGS=2.75V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

MEBSS138 General Description

The MEBSS138 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such a.

MEBSS138 Datasheet (685.46 KB)

Preview of MEBSS138 PDF

Datasheet Details

Part number:

MEBSS138

Manufacturer:

Matsuki

File Size:

685.46 KB

Description:

N-channel mosfet.

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TAGS

MEBSS138 N-Channel MOSFET Matsuki

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