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MEBSS138D-G

N-Channel MOSFET

MEBSS138D-G Features

* RDS(ON)≦3.5Ω@VGS=10V

* RDS(ON)≦4Ω@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Display inverter (

MEBSS138D-G General Description

The MEBSS138D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such.

MEBSS138D-G Datasheet (1.08 MB)

Preview of MEBSS138D-G PDF

Datasheet Details

Part number:

MEBSS138D-G

Manufacturer:

Matsuki

File Size:

1.08 MB

Description:

N-channel mosfet.

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TAGS

MEBSS138D-G N-Channel MOSFET Matsuki

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