MC4863PD
MegaPower
1.78MB
Dual 2.2w audio amplifier. The MC4863 is a dual bridge-connected audio power amplifier which, when connected to a 5V supply, will deliver 2.2W to a 4Ω load(No t
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MC4863 - Dual 2.2W Audio Amplifier
(MegaPower)
MC4863
Dual 2.2W Audio Amplifier Plus Stereo Headphone Function
Gen er al D es c r i p t i o n
The MC4863 is a dual bridge-connected audio power ampl.
MC4863M - Dual 2.2W Audio Amplifier
(MegaPower)
MC4863
Dual 2.2W Audio Amplifier Plus Stereo Headphone Function
General Description
The MC4863 is a dual bridge-connected audio power amplifier whic.
MC4863S - Dual 2.2W Audio Amplifier
(MegaPower)
MC4863
Dual 2.2W Audio Amplifier Plus Stereo Headphone Function
General Description
The MC4863 is a dual bridge-connected audio power amplifier whic.
MC4800 - Dual N-Channel MOSFET
(FreesCale)
Freescale Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and.
MC4801 - P-Channel MOSFET
(FreesCale)
Freescale P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to e.
MC4803A - P-Channel MOSFET
(FreesCale)
Freescale
AO4803A/ MC4803A
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed .
MC4805 - Dual P-Channel MOSFET
(FreesCale)
Freescale
AO4805/ MC4805
Dual P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching spe.
MC4807 - Dual P-Channel MOSFET
(FreesCale)
Freescale
AO4807/ MC4807
Dual P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching spe.
MC4811 - Dual P-Channel MOSFET
(FreesCale)
Freescale
AO4811/ MC4811
Dual P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching spe.
MC4812 - Dual N-Channel MOSFET
(FreesCale)
Freescale Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power .