MT4LC8M8B6 Datasheet - Micron Technology

DRAM

MT4LC8M8B6 Features

* Single +3.3V ±0.3V power supply

* Industry-standard x8 pinout, timing, functions, and packages

* 13 row, 10 column addresses (E1) or 12 row, 11 column addresses (B6)

* High-performance CMOS silicon-gate process

* All inputs, outputs and clocks are LVTTLcompa

MT4LC8M8B6 General Description

The 8 Meg x 8 DRAMs are high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits organized in a x8 configuration. The 8 Meg x 8 DRAMs are functionally organized as 8,388,608 locations containing eight bits each. The 8,388,608 memory locations are arranged in 8,192 rows by 1,0.

MT4LC8M8B6 Datasheet (382.20 KB)

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Part number:

MT4LC8M8B6

Manufacturer:

Micron Technology

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382.20 KB

Description:

Dram.

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MT4LC8M8B6 Features

MT4LC8M8B6 General Description

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