MT4LC8M8P4 DRAM

Micron Technology

Description

8 MEG x 8 EDO DRAM DRAM .
The 8 Meg x 8 DRAM is a high-speed CMOS, dynamic random-access memory devices containing 67,108,864 bits and designed to operate from 3V to 3.

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Datasheet Specifications

Part number: MT4LC8M8P4
Manufacturer: Micron Technology
File Size: 397.75 KB
Datasheet: MT4LC8M8P4_MicronTechnology.pdf
Description: DRAM

Features

* Single +3.3V ±0.3V power supply
* Industry-standard x8 pinout, timing, functions, and packages
* 12 row, 11 column addresses (C2) or 13 row, 10 column addresses (P4)
* High-performance CMOS silicon-gate process
* All inputs, outputs and clocks are LVTTLcompa

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MT4LC8M8P4 DRAM Micron Technology

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