2N3810L - PNP SILICON DUAL TRANSISTOR

Microsemi Corporation

Datasheet Details

Part number	2N3810L
Manufacturer	Microsemi Corporation
File Size	61.12 KB
Description	PNP SILICON DUAL TRANSISTOR
Datasheet	2N3810L Datasheet
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TECHNICAL DATA PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336 Devices 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC Value 60 60 5.0 50 One Both Section 1 Sections2 0.5 0.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C Operating & Storage Junction Temperature Range 1) Derate linearly 2.86 mW/0C for TA > +250C 2) Derate linearly 3.43 mW/0C for TA > +250C PT TJ, Tstg 0 W C TO-78* *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max.

Published: Mar 23, 2005 |