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2N3810HR - Hi-Rel PNP dual matched bipolar transistors

2N3810HR Description

8 5 1 4 Flat-8 6 5 4 1 2 3 LCC-6 1 C1 2 B1 3 E1 C2 8 B2 7 E2 6 4 5 Flat-8 Pin 4 and pin 5 are connected together to the seal ring and lid 4 E.
The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity.

2N3810HR Features

* Vceo 60 V IC(max. ) 0.05 A HFE at 10 V, 150 mA > 125 Tj(max. ) 200 °C
* Hermetic packages
* ESCC qualified

2N3810HR Applications

* and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N3810Kx 2N3810RKx SOC3810HRx SOC3810RH

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Hi-Rel PNP dual matched bipolar transistors STMicroelectronics
STMicroelectronics 2N3810HR-like datasheet