Datasheet4U Logo Datasheet4U.com

2N3810 - PNP Transistor

Datasheet Summary

Features

  • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/336 which Semicoa meets in all cases. Generic Part Number: 2N3810 REF: MIL-PRF-19500/336 TO-78 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous.

📥 Download Datasheet

Datasheet preview – 2N3810

Datasheet Details

Part number 2N3810
Manufacturer Semicoa Semiconductor
File Size 43.18 KB
Description PNP Transistor
Datasheet download datasheet 2N3810 Datasheet
Additional preview pages of the 2N3810 datasheet.

📁 Similar Datasheet

  • 2N3810 - PNP SILICON DUAL TRANSISTOR (Microsemi Corporation)
  • 2N3810 - (2N3806 - 2N3811) Dual AMplifier Transistors (Motorola)
  • 2N3810 - PNP Silicon Dual Amplifier Transistor (NES)
  • 2N3810 - SILICON DUAL PNP TRANSISTORS (Central Semiconductor)
  • 2N3810A - (2N3806 - 2N3811) Dual AMplifier Transistors (Motorola)
  • 2N3810A - SILICON DUAL PNP TRANSISTORS (Central Semiconductor)
  • 2N3810A - PNP Silicon Dual Amplifier Transistor (NES)
  • 2N3810DCSM - DUAL HIGH GAIN PNP TRANSISTORS (Seme LAB)
  • 2N3810DCSM - SILICON DUAL MATCHED PNP TRANSISTORS (TT)
  • 2N3810HR - Hi-Rel PNP dual matched bipolar transistors (STMicroelectronics)
Other Datasheets by Semicoa Semiconductor

Full PDF Text Transcription

Click to expand full text
Data Sheet No. 2N3810 Type 2N3810 Geometry 0220 Polarity PNP Qual Level: JAN - JANS Features: • • • • Two electrically isolated, matched PNP transistors as one dual unit. Housed in TO-78 case. Also available in chip form using the 0220 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/336 which Semicoa meets in all cases. Generic Part Number: 2N3810 REF: MIL-PRF-19500/336 TO-78 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter voltage Collector-Base Voltage Emitter-Base voltage Collector Current, Continuous Power Dissipation, TA = 25 C, one section Derate above 25oC Power Dissipation, TA = 25oC, two sections Derate above 25 C Operating Junction Temperature Storage Temperature o o Symbol VCEO VCBO VEBO IC PT Rating 60 60 5.0 50 0.5 2.
Published: |