* Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 13.5 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: De
MRF544
Microsemi ↗ Corporation
86.96 KB
Rf & microwave discrete low power transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MRF544
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fea.
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