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MRF545

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF545 Features

* Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz High Collector Base Breakdown Voltage - BVCBO = 100 V (min) High FT - 1400 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Desi

MRF545 General Description

Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Volta.

MRF545 Datasheet (87.78 KB)

Preview of MRF545 PDF

Datasheet Details

Part number:

MRF545

Manufacturer:

Microsemi ↗ Corporation

File Size:

87.78 KB

Description:

Rf & microwave discrete low power transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Fea.

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MRF545 MICROWAVE DISCRETE LOW POWER TRANSISTORS Microsemi Corporation

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